Microelectronic Devices and Modelling (ETF AEI MKM 4749) |
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General information |
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Module title | Microelectronic Devices and Modelling |
Module code | ETF AEI MKM 4749 |
Study | ETF-B |
Department | Control and Electronics |
Year | 1 |
Semester | 1 |
Module type | Elective |
ECTS | 5 |
Hours | 49 |
Lectures | 39 |
Exercises | 0 |
Tutorials | 10 |
Module goal - Knowledge and skill to be achieved by students |
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| Objective of the course is twofold: <br> 1. the students should gain a sound understanding of operation of existing semiconductor devices, <br> 2. they should master principles of semiconductor analysis so that they can later learn about newly developed semiconductor devices and their application. With these two goals in mind, the second one in particular, the first part of the course is structured so as to enable students to gain the basic knowledge of electrical properties of semiconductor materials. Starting with basic principles of quantum mechanics and solid state physics the student is provided with background on the nature and conduction processes in solids - the basis for understanding operation of all semiconductor devices. <br> |
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Syllabus |
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| 1. Crystal properties, semiconductors, crystal lattice, semiconductor crystal growth, epitaxial growth. <br> 2. Atoms and electrons, physical model of an atom, basic principles of quantum mechanics, atomic structure and the periodic table. <br> 3. Energy bands in solids, electrons and holes, bonding forces in solids, charge carriers in semiconductor, concentration of electrons and holes, drift of carriers in an electric field. <br> 4. Current in extrinsic semiconductors, optical absorption, carrier lifetime and photoconductivity, carrier diffusion. <br> 5. Junctions, fabrication of p-n junctions, p-n junction in equilibrium, direct and reverse polarization of p-n junction, p-n junction breakdown, transient and ac conditions, metal-semiconductor contact, heterojunction. <br> 6. Field effect transistors, transistor operation, junction FET, MESFET, MOSFET. <br> 7. Bipolar junction transistors, principle of operation, minority carrier distribution and terminal currents, transistor biasing, transistor as a switch, Gummel-Poon model, frequency limitations of bipolar transistors, heterojunction bipolar transistor. <br> 8. Optoelectronic devices, photodiodes, Light-Emitting Diodes, lasers. <br> 9. Integrated circuits, advantages of integration, evolution of integrated circuits, monolithic device elements, CMOS circuits, Silicon-On-Insulator, Ultra Large-Scale Integration (ULSI). Testing, bonding and packaging. <br> |
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Literature |
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| Recommended | 1. Lecture notes and slides (will be available at the Web site) <br> 2. R.F. Pierret: Semiconductor Device Fundamentals, Addison Wesley, 1996 <br> 3. Ben G. Streetman, S. Banerjee: Solid State Electronic Devices, Prentice Hall, 2000 <br> |
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Didactic methods |
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| Course is being held through two kinds of activities: <br> - lectures in an auditory, in which teacher solves specific tasks. <br> - tutorials, where under tutor's guidance students solve and implement other tasks, including tasks from previous exams. <br> |
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Exams |
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| Through the course, student gains points according to following system. <br> Attendance to lectures and tutorials: 10 points, student which misses lectures and/or tutorials more than three times cannot get points for these activities. <br> Homework assignments: maximum 10 points. There are 3-5 homework exercises, equally allocated through semester. <br> Partial exams: two written partial exams, each worth 20 points. <br> Partial exam lasts for 90 minutes and is structured in the following way: <br> - answers on simple questions, whose purpose is to verify if student has basic theory knowledge. Student which answers all the questions correctly gets 5 points. <br> - solving the assignments with given multiple answers, of which only one is correct. Student which answers all the assignments correctly gets 5 points. <br> - solving one assignment without given answer; correctly solved assignment is worth 10 points. <br> Student which in the end of the course has less than 20 points has to take the course again. <br> Student which in the end of the course has 40 or more points can take final exam; this exam is consisted of discussion on partial exams tasks, homework and answers to questions referring to course subjects. <br> Final verbal examination is worth maximum 40 points. To pass the course, on this examination student must have minimum 20 points. Student which has less than 20 points on final verbal examination takes verbal corrective examination. <br> Student which has gained more than 20 but less than 40 points during the course takes corrective exam. Corrective exam is structured in the following way: <br> - written examination, structured in the same way as partial exam; on this examination student solves tasks from subjects he/she did not pass (10 or more points) by taking partial written exams. <br> - verbal examination, structured in the same way as final verbal exam. <br> Student can take verbal corrective examination only if after passing written corrective examination has made total score of 40 or more points; this score is made of points gained through: attendance, homework, passing partial exams and passing written corrective examination. <br> Verbal corrective examination is worth maximum 40 points. To pass the course, on this examination student must have minimum 20 points. Student which has less than 20 points on verbal corrective examination has to take the course again. <br> |
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Aditional notes |
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| On the examination students can use sets of formulae prepared by the teacher that can be of use for solving the tasks. Use of other notes, books, mobile phones or any other electronic tools is not allowed, except pocket calculator. Tasks and theory questions on the examination are similar to those solved on lectures and auditory exercises. <br> |
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